2011
EMSS 2011 Proceeding
3D Physics Based Modeling and Simulation of Intrinsic Stress in SiGe for Nano PMOSFETs
Authors: Abderrazzak EL boukili
Abstract
We are proposing a new analytical model, in three dimensions, to calculate intrinsic stress that builds during deposition of Silicon Germanium pockets in source and drain of strained nano PMOSFETs. This model has the advantage of accurately incorporating the effects of the Germanium mole fraction and the crystal orientation. This intrinsic stress is used to calculate the extrinsic stress distribution in the channel after deposition. Simulation results of channel stress based on this model will be presented and discussed for Intel technology based nano PMOS transistors.
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