2012
EMSS 2012 Proceeding
Improved linearity CMOS multifunctional structure using computational circuits
Authors: Cosmin Popa
Abstract
Original low-power low-voltage multifunctional structure with improved performances will be presented, allowing to implement (with minor changes in the design) two important functions signal gain with theoretical null distortions and simulation of a perfect linear resistor with positive equivalent resistance. The great advantages of the increased modularity and controllability and of the reduced design costs associated represent an immediate consequence of the multiple functions realized by the proposed structures. The linearity is strongly increased by implementing original techniques, while the silicon occupied area per function is reduced as a result of the proposed multifunctionality. The structures are implemented in m35.0 ? CMOS technology and are supplied at V3± . The circuits present a very good linearity (in the worst case, %4.0THD < ), correlated with an extended range of the input voltage (at least V5.0± ). The tuning range of the active resistors is about hundreds ?k - ?M .
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