2015
EMSS 2015 Proceeding
Investigation of thermal effects on elastic constants to simulate correctly the thermal stress in nano transistors
Authors: Abderrazzak El Boukili
Abstract
Mechanical stress is the main performance booster for the new generation of nano CMOS transistors. Then, accurate models to calculate this stress are requested. In this paper, we are proposing new and accurate mathematical model to calculate numerically and correctly the thermal induced stress in the new generation of Intel nano PMOSFETs. In this model, we are taking into account, for the first time, the effects of the fabrication temperature on the elastic constants of Silicon and Silicon Germanium materials to calculate the thermal stress. Numerical results from different simulations with different temperatures for thermal induced stress in 14 nm Intel nano PMOS of the year 2014 will be given, discussed, and compared with literature.
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