2016
EMSS 2016 Proceeding
Modeling and simulation of the effects of thermal expansion mismatch and temperature on thermal induced stresses in modern nano pMOS
Authors: A. El Boukili
Abstract
Stress is used to enhance dramatically the electrical and optical performances of modern nanotransistors and solar cells. The purpose of this paper is to develop and apply accurate mathematical models to simulate and analyze correctly the thermal induced stresses in nano pMOS transistors having Silicon-Germanium (SiGe) thin films as stressors. These stresses are due to the growth temperatures of the SiGe films and to the thermal mismatch between the thermal expansion coefficients (TECs) of SiGe films and Silicon substrate. In the proposed models, we are accurately taking into account the effects of the fabrication temperatures on the TECs of SiGe films and Silicon substrate to calculate the resulting thermal strains and stresses. Numerical results showing the effects of growth temperatures and thermal mismatch between TECs of SiGe and Silicon on the resulting thermal stresses will be presented, discussed and compered with literature for Intel 14 nm pMOS transistor.
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