2014
EMSS 2014 Proceeding
Modeling of lattice thermal expansion for simulation of thermal stress in 3D nano mosfets
Authors: Abderrazzak El Boukili
Abstract
We are developing new model to calculate the lattice thermal expansion coefficient of Silicon Germanium (Si(1-x)Ge(x)) thin films used as performance boosters for nanoscale PMOSFETs. These models take into account the dependence of thermal expansion coefficient on Germanium mole fraction x and temperature. This thermal expansion coefficient is used to calculate the thermal induced intrinsic stress in Si(1- x)Ge(x) thin film after deposition. And this intrinsic stress is used to calculate and simulate numerically the resulting extrinsic stress in the channel of a nano PMOS based on Intel technology. 3D simulation results of channel stress will be presented, analyzed, and compared with literature.
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